DTP4N65F Overview
DTP4N6/DTP4N6F/DTU4N6/DTL4N6 .din-tek.jp Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 48 12 19 Single.
DTP4N65F Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- pliant to RoHS directive 2002/95/EC