DTP4N65SJ Description
DTP4N6SJ/DTP4N6FSJ/DTU4N6SJ/DTL4N6SJ .din-tek.jp /$IBOOFM7 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) 650 VGS = 10 V 15 3 6 Configuration Single.
DTP4N65SJ Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- pliant to RoHS directive 2002/95/EC