DTQ238D02 Datasheet | Din-Tek Semiconductor

FEATURES - DT-Trench Power MOSFET - 100 % Rg and UIS tested - Low Gate Charge APPLICATIONS - Load Switch  - DC/DC Converters .din-tek.jp DFN 2X2-6 PIN1 SI G1 D2 D1 D2 Top View D1 G2 S2 Bottom View G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb VDS VGS TA = 25 °C ID TA = 100 °C IDM Maximum Power Dissipationc Operating Junction and Storage Temperature Range TA = 25 °C TA = 100 °C PD TJ, Tstg LIMIT 20 ± 12 6 4.2 24 2.4 0.96 -55 to +150 UNIT V W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount)d SYMBOL Rth JA LIMIT 52 UNIT °C/W Notes a. Calculated continuous current based on maximum allowable junction temperature. b. Repetitive rating; pulse width limited by max. junction temperature. c. Pd is based on max. junction temperature, using junction-ambient thermal resistance. d. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,in a still air environment with Ta=25 °C. Rev. 1.0 .din-tek.jp SPECIFICATIONS (TA = 25 °C, unless otherwise noted) PARAMETER...