DTQ3309 Datasheet | Din-Tek Semiconductor

FEATURES - DT-Trench Power MOSFET - 15J DQG8,67HVWHG - Low On-Resistance for Low Voltage Drop APPLICATIONS ‡ Battery, Load and Adaptor Switches - Notebook puters - Notebook Battery Packs Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb Single Avalanche Energy Maximum Power Dissipationc Operating Junction and Storage Temperature Range TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C VGS ID IDM EAS PD TJ, Tstg LIMIT - 30 ± 20 - 50 - 34 - 200 38 48 19.2 - 55 to +150 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount)d Junction-to-Case (Drain) SYMBOL Rth JA Rth JC LIMIT 25 2.6 UNIT °C/W Notes a. Calculated continuous current based on maximum allowablejunction temperature. b. Repetitive rating; pulse width limited by max. junction temperature. c. Pd is based on max. junction temperature, using junction-case thermal resistance. d. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,in a still air environment with Ta=25 °C. Rev.1.0 .din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static...