• Part: DTQ3312
  • Description: 30V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Din-Tek Semiconductor
  • Size: 3.62 MB
Download DTQ3312 Datasheet PDF
Din-Tek Semiconductor
DTQ3312
DTQ3312 is 30V N-Channel MOSFET manufactured by Din-Tek Semiconductor.
FEATURES - DT-Trench MOSFET - 15J DQG8,67HVWHG - Low RDS(ON) - High Current Capability APPLICATIONS ‡ Battery charging and discharging for battery pack ‡ Power switch for Adaptor/ Charger Top View DFN 3x3 -8L Bottom View Pin 1 Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Currentb Single Avalanche Energy Maximum Power Dissipationc Operating Junction and Storage Temperature Range TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C VDS VGS ID IDM EAS PD TJ, Tstg LIMIT 30 ± 20 63 45 190 78 45 19.3 - 55 to +150 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount)d Junction-to-Case (Drain) SYMBOL Rth JA Rth JC LIMIT 40 2.7 UNIT °C/W Notes a. Calculated continuous current based on maximum allowablejunction temperature. b. Repetitive rating; pulse width limited by max. junction temperature. c. Pd is based on max. junction temperature, using junction-case thermal resistance. d. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,in a still air environment with Ta=25 °C. Rev.C ZZZGLQWHNMS SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX....