Datasheet Summary
Power MOSFET
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PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 60 VGS =
- 10 V
12 3.8 5.1 Single
Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to Lead Creepage Distance = 4.8 mm
- P-Channel
- 175 °C Operating Temperature
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available
Available
RoHS-
PLIANT
TO-236 (SOT-23)
G1 S2
3D
Top View
D P-Channel...