DTU4N60 Overview
D51/%56/ .daysemi.jp Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 39 10 19 Single 600 1.2.
DTU4N60 Key Features
- Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely High F