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D56/
www.daysemi.jp
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0057 at VGS = 10 V 0.0076 at VGS = 4.5 V ID (A)a 40 13.8 nC 40 Qg (Typ.)
FEATURES
• Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
D
TO-252
• Low-Side Switch • Notebook DC/DC
G
G
D
S
S N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS Limit 30 ± 20 40a 40a 22.7b, c 19.7b, c 70 35 61 40a 4.1b, c 50 32 5b, c 3.
DTU40N03 Datasheet
