Datasheet4U Logo Datasheet4U.com

DTU40N10 - N-Channel MOSFET

Download the DTU40N10 datasheet PDF. This datasheet also covers the DTU40N10_Din variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • TrenchFET® Power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DTU40N10_Din-Tek.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DTU40N10
Manufacturer Din-Tek
File Size 389.34 KB
Description N-Channel MOSFET
Datasheet download datasheet DTU40N10 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DTU40P06 P-Channel MOSFET VBsemi
DTU09N03 N-Channel 30V MOSFET VBsemi

Other Datasheets by Din-Tek

Part Number Description
DTU40N03 N-Channel MOSFET
DTU40N06 N-Channel MOSFET
DTU40N08 N-Channel MOSFET
DTU40P06 P-Channel MOSFET
DTU4706 N- and P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.din-tek.jp DT81 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 37.5 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 100 ± 20 40 23 75 35 61 107 b Unit V A mJ W °C 3.