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DT81
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 37.5
FEATURES
• TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package
Available
RoHS*
COMPLIANT
D
TO-252
G
G
D
S
Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 100 ± 20 40 23 75 35 61 107
b
Unit V
A
mJ W °C
3.
DTU40N10 Datasheet
