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DTU40N08 - N-Channel MOSFET

Download the DTU40N08 datasheet PDF. This datasheet also covers the DTU40N08_Din variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ID (A)a Qg (Typ. ) 13.8 nC 40 10 V 40 GS = 4.5 V.
  • Halogen-free.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested RoHS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DTU40N08_Din-Tek.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DTU40N08
Manufacturer Din-Tek
File Size 1.27 MB
Description N-Channel MOSFET
Datasheet download datasheet DTU40N08 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DTU40P06 P-Channel MOSFET VBsemi
DTU09N03 N-Channel 30V MOSFET VBsemi

Other Datasheets by Din-Tek

Part Number Description
DTU40N03 N-Channel MOSFET
DTU40N06 N-Channel MOSFET
DTU40N10 N-Channel MOSFET
DTU40P06 P-Channel MOSFET
DTU4706 N- and P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.022 at V 0.028 at V GS = www.din-tek.jp DTU40N08 FEATURES ID (A)a Qg (Typ.) 13.8 nC 40 10 V 40 GS = 4.5 V • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS D TO-252 • Low-Side Switch • Notebook DC/DC G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS Limit 30 ± 20 40a 40a 22.7b, c 19.7b, c 70 35 61 40a 4.1b, c 50 32 5b, c 3.