* Low Gate Charge Qg Results in Simple Drive Requirement
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS
* COMPLIANT
* Fully Characterized Capacitance and Avalanche Voltage and Current
* Compliant to RoHS directive 2002/95/EC TO-220AB T
DTU4N65SJ Datasheet (542.28 KB)
DTU4N65SJ
Din-Tek
542.28 KB
N-channel mosfet.
DTP4N6SJ/DTP4N6FSJ/DTU4N6SJ/DTL4N6SJ www.din-tek.jp /$IBOOFM7 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Ma.
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