Datasheet4U Logo Datasheet4U.com

40N10 - DTU40N10

Features

  • TrenchFET® Power.

📥 Download Datasheet

Datasheet preview – 40N10

Datasheet Details

Part number 40N10
Manufacturer DinTek
File Size 388.83 KB
Description DTU40N10
Datasheet download datasheet 40N10 Datasheet
Additional preview pages of the 40N10 datasheet.

📁 Similar Datasheet

  • 40N10 - N-Channel MOSFET (VBsemi)
  • 40N10 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
  • 40N10 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 40N10B - N-CHANNEL MOSFET (CHONGQING PINGYANG)
  • 40N10F - N-CHANNEL MOSFET (CHONGQING PINGYANG)
  • 40N10F7 - N-channel Power MOSFET (STMicroelectronics)
  • 40N10H - N-CHANNEL MOSFET (CHONGQING PINGYANG)
  • 40N120 - IXEH40N120 (IXYS Corporation)
  • 40N120 - IGBT (ON Semiconductor)
  • 40N120FL2 - IGBT (ON Semiconductor)
Other Datasheets by DinTek

    Full PDF Text Transcription

    Click to expand full text
    www.din-tek.jp DT81 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 37.5 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 100 ± 20 40 23 75 35 61 107 b Unit V A mJ W °C 3.
    Published: |