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2DB1132P Datasheet

32V PNP POWER SWITCHING TRANSISTOR

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2DB1132P/Q/R
32V PNP POWER SWITCHING TRANSISTOR IN SOT-89
Features
BVCEO > -32V
IC = -1A high Continuous Collector Current
Complementary NPN Type: 2DD1664
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case material: molded Plastic. “Green” molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.055 grams (Approximate)
SOT89
Top View
C
B
E
Device Symbol
E
CC
B
Pin Out
Top View
Ordering Information (Note 4)
Product
2DB1132P-13
2DB1132Q-13
2DB1132R-13
2DB1132R-13R
Marking
P13P
P13Q
P13R
P13R
Reel size (inches)
13
13
13
13
Tape width (mm)
12
12
12
12
Quantity per reel
2,500
2,500
2,500
4,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
(Top View)
YWW
P13x
P13x = Product Type Marking Code:
Where P13P = 2DB1132P
P13Q = 2DB1132Q
P13R = 2DB1132R
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
1 of 6
www.diodes.com
December 2013
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

2DB1132P Datasheet

32V PNP POWER SWITCHING TRANSISTOR

No Preview Available !

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
2DB1132P/Q/R
Value
-40
-32
-5
-1
-2
Unit
V
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1
1.5
2.0
125
83
60
22
-55 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V 3A
VC
Notes:
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
2 of 6
www.diodes.com
December 2013
© Diodes Incorporated


Part Number 2DB1132P
Description 32V PNP POWER SWITCHING TRANSISTOR
Maker Diodes
Total Page 6 Pages
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