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Diodes Semiconductor Electronic Components Datasheet

2DB1188R Datasheet

32V PNP MEDIUM POWER TRANSISTOR

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Features
BVCEO > -32V
IC = -2A high Continuous Current
Low saturation voltage VCE(sat) < 800mV @ 2A
Complementary NPN Type: 2DD1766
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
2DB1188P/Q/R
32V PNP MEDIUM POWER TRANSISTOR IN SOT89
Mechanical Data
Case: SOT89
Case material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.052 grams (approximate)
SOT89
Top View
C
B
E
Device Symbol
E
CC
B
Pin Out – Top View
Ordering Information (Note 4)
Part Number
2DB1188P-13
2DB1188Q-13
2DB1188Q-13R
2DB1188R-13
Marking
P23P
P23Q
P23Q
P23R
Reel size (inches)
13
13
13
13
Tape width (mm)
12
12
12
12
Quantity per reel
2,500
2,500
4,000
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
P23x = Product Type Marking Code
Where P23P = 2DB1188P
P23Q = 2DB1188Q
P23R = 2DB1188R
= Manufacturers’ code marking
YWW = Date Code Marking
Y = Last Digit of Year (ex: 1 = 2011)
WW = Week Code (01 – 53)
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
1 of 7
www.diodes.com
February 2013
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

2DB1188R Datasheet

32V PNP MEDIUM POWER TRANSISTOR

No Preview Available !

2DB1188P/Q/R
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
-40
-32
-6
-2
-3
-500
Unit
V
V
V
A
A
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1
125
19
-55 to +150
Unit
W
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
2 of 7
www.diodes.com
February 2013
© Diodes Incorporated


Part Number 2DB1188R
Description 32V PNP MEDIUM POWER TRANSISTOR
Maker Diodes
Total Page 7 Pages
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