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BSS138
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 50V
RDS(ON) 3.5Ω @ VGS = 10V
ID TA = +25°C
200mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Features and Benefits
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability. https://www.diodes.