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BSS138 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General.

General Description

These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance.

These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Key Features

  • 0.22 A, 50 V.
  • RDS(on) = 3.5 W @ VGS = 10 V.
  • RDS(on) = 6.0 W @ VGS = 4.5 V.
  • High Density Cell Design for Extremely Low RDS(on).
  • Rugged and Reliable.
  • Compact Industry Standard SOT.
  • 23 Surface Mount Package.
  • HBM Class 0A, MM Class M2 (Note 3).
  • This Device is Pb.
  • Free and Halogen Free DATA SHEET www. onsemi. com D G S SOT.
  • 23.
  • 3 CASE 318.
  • 08.

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