BSS138 Datasheet Summary
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description These N- Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on- state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- 0.22 A, 50 V
- RDS(on) = 3.5 W @ VGS = 10 V
- RDS(on) = 6.0 W @ VGS = 4.5 V
- High Density Cell Design for Extremely Low RDS(on)
- Rugged and Reliable
- pact Industry Standard SOT- 23 Surface Mount Package
- HBM Class 0A, MM Class M2 (Note 3)
- This Device is Pb- Free and Halogen Free
DATA SHEET .onsemi.
D
G S
SOT- 23- 3 CASE 318- 08
MARKING DIAGRAM
3 Drain
SSMG G
1 Gate
2 Source
SS = Specific Device Code
M
= Date Code-
G
= Pb- Free Package
(Note: Microdot may be in either location)
- Date Code orientation and/or position may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BSS138, BSS138-...
