Datasheet Summary
60 V, 360 mA N-channel Trench MOSFET
Rev. 1
- 2 November 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID
Quick reference data Parameter drain-source voltage gate-source voltage drain current
RDSon drain-source on-state...
