Datasheet Summary
60 V, 360 mA N-channel Trench MOSFET
Rev. 1
- 2 November 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
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- - Logic-level patible Very fast switching Trench MOSFET technology AEC-Q101 qualified
1.3 Applications
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- - Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance...
