Multicomp BSS138-7-F
This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it.| Part No. | BSS138-7-F |
|---|---|
| Datasheet | BSS138-7-F Download |
| Manufacturer |  Multicomp |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low On-Resisrance
● Low Gate Threshold Voltage
● Low Input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
APPLICATIONS
:● N-channel Enhancement Mode Effect Transistor
● Switching Application
MAXIMUM RATINGS
: Ratings at 25°C unless otherwise specified. Parameter Drain-source voltage Drain-gate voltage RGS ≤20kΩ Gate-source voltage Drain current -continuous Power dissipation Thermal resistance, junction-to-ambient Junction and storage temperature Symbol VDSS VGGR VGSS ID PD RθJA TJ, Tstg Value 50 50 ±20 200 300 417 -55 to +150 Page <1> SOT-23 Units V V V mA mW °C/W °C 27/02/13 V1.0 N-Channel Logic Level Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS
: Ratings at 25°C unless otherwise specified Parameter Gate leakage current Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-o...
