BSS138-7-F Datasheet | Multicomp

N-Channel Logic Level Enhancement Mode Field Effect Transistor Features : -   Low On-Resisrance -   Low Gate Threshold Voltage -   Low Input Capacitance -   Fast Switching Speed -   Low Input / Output Leakage Applications: -   N-channel Enhancement Mode Effect Transistor -   Switching Application Maximum Ratings: Ratings at 25°C unless otherwise specified. Parameter Drain-source voltage Drain-gate voltage RGS ≤20kΩ Gate-source voltage Drain current -continuous Power dissipation Thermal resistance, junction-to-ambient Junction and storage temperature Symbol VDSS VGGR VGSS ID PD RθJA TJ, Tstg Value 50 50 ±20 200 300 417 -55 to +150 .element14. .farnell. .newark. Page <1> SOT-23 Units V V V m A m W °C/W °C 27/02/13 V1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor Electrical Characteristics: Ratings at 25°C unless otherwise specified Parameter Gate leakage current Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-off delay...