BSS138-7-F - N-Channel MOSFET

Multicomp

General Description

Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it.

Key Features

Low On-Resisrance.
Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input / Output Leakage.

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BSS138-7-F n-channel mosfet by Multicomp - Datasheet Preview

Datasheet Details

Part number	BSS138-7-F
Manufacturer	Multicomp
File Size	853.19 KB
Description	N-Channel MOSFET
Datasheet	BSS138-7-F Datasheet

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Full PDF Text Transcription (Reference)

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Features: • Low On-Resisrance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage Applications: • N-channel Enhancement Mode Effect Transistor • Switching Application Maximum Ratings: Ratings at 25°C unless otherwise specified. Parameter Drain-source voltage Drain-gate voltage RGS ≤20kΩ Gate-source voltage Drain current -continuous Power dissipation Thermal resistance, junction-to-ambient Junction and storage temperature Symbol VDSS VGGR VGSS ID PD RθJA TJ, Tstg Value 50 50 ±20 200 300 417 -55 to +150 www.element14.com www.farnell.com www.newark.com Page <1> SOT-23 Units V V V mA mW °C/W °C 27/02/13 V1.