Datasheet Summary
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1
- 12 August 2011 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 1.5 kV
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = 10 V;...
