Unisonic Technologies BSS138
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.| Part No. | BSS138 |
|---|---|
| Datasheet | BSS138 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 3.5Ω @ VGS=10 V, ID=0.22A RDS(ON) ≤ 6.0Ω @ VGS=4.5V, ID=0.22A RDS(ON) ≤ 8.0Ω @ VGS=2.5V, ID=0.20A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified● SYMBOL 2 1 SOT-23-3 (JEDEC TO-236) 3 12 SOT-323
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free BSS138L-AE2-R BSS138G-AE2-R BSS138L-AL3-R BSS138G-AL3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 SOT-323 Pin Assignment 123 GSD GSD Packing Tape Reel Tape Reel Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-271.G BSS138
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 4 QW-R502-271.G BSS138 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current DC Pulse ID 0.22 0.88 A Power Dissipation SOT-23-3 SOT-323 PD 0.36 0.15 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
