onsemi BSS138
This Device is Pb−Free and Halogen Free DATA SHEET D G S SOT−23−3 CASE 318−08 MARKING DIAGRAM 3 Drain SSMG G 1 Gate 2 Source SS = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location.- Channels : 1
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | BSS138 |
|---|---|
| Datasheet | BSS138 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.FEATURES
● 0.22 A, 50 V ♦ RDS(on) = 3.5 W @ VGS = 10 V ♦ RDS(on) = 6.0 W @ VGS = 4.5 V● High Density Cell Design for Extremely Low RDS(on)
● Rugged and Reliable
● Compact Industry Standard SOT−23 Surface Mount Package
● HBM Class 0A, MM Class M2 (Note 3)
● ORDERING INFORMATION Device BSS138, BSS138−G Package SOT−23−3 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 April, 2024 − Rev.
