Datasheet4U Logo Datasheet4U.com

BSS138-G - MOSFET

Key Features

  • -High density cell design for extremely low RDS(ON). -Rugged and Reliable. Mechanical data -Case: SOT-23, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. Circuit diagram D G S 1 : Gate 2 : Source 3 : Drain 0.055(1.40) 0.047(1.20) 0.041(1.05) 0.035(0.90) SOT-23 0.118(3.00) 0.110(2.80) 3 12 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.004(0.10) max 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) Maximu.

📥 Download Datasheet

Datasheet Details

Part number BSS138-G
Manufacturer Comchip
File Size 124.70 KB
Description MOSFET
Datasheet download datasheet BSS138-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSS138-7-F N-Channel MOSFET Multicomp
BSS138-NL N-Channel 60V MOSFET VBsemi
BSS138 N-Channel MOSFET Fairchild Semiconductor
BSS138 N-Channel MOSFET ON Semiconductor
BSS138 N-Channel 50-V(D-S) MOSFET H&M Semiconductor

Other Datasheets by Comchip

Part Number Description
BSS84-HF P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET BSS138-G N-Channel 50-V(D-S) MOSFET RoHS Device Features -High density cell design for extremely low RDS(ON). -Rugged and Reliable. Mechanical data -Case: SOT-23, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. Circuit diagram D G S 1 : Gate 2 : Source 3 : Drain 0.055(1.40) 0.047(1.20) 0.041(1.05) 0.035(0.90) SOT-23 0.118(3.00) 0.110(2.80) 3 12 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.004(0.10) max 0.020(0.50) 0.012(0.