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BSS138W - N-Channel MOSFET

General Description

These N-Channel enhancement mode field effect transistor.

Key Features

  • RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A.
  • High density cell design for extremely low RDS(ON).
  • Rugged and Reliable.
  • Compact industry standard SOT-323 surface mount package D S G SOT-323 Marking : 138 Absolute Maximum Ratings Symbol VDSS VGSS ID TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Value 50 ±20 (Note1) 0.21 0.84 -55 to +150 300 Units V V A A °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.