Description
These N-Channel enhancement mode field effect transistor.
Features
- RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A.
- High density cell design for extremely low RDS(ON).
- Rugged and Reliable.
- Compact industry standard SOT-323 surface mount package
D
S G
SOT-323
Marking : 138
Absolute Maximum Ratings
Symbol
VDSS VGSS ID TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current
TA = 25°C unless otherwise noted
Parameter
Value
50 ±20 (Note1) 0.21 0.84 -55 to +150 300
Units
V V A A °C.
BSS138W Datasheet
