Datasheet Summary
- N-Channel Logic Level Enhancement Mode Field Effect Transistor
December 2010
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A
- High density cell design for extremely low RDS(ON)
- Rugged...
