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BSS138K - N-Channel MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage D.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Pb Free / RoHS Compliant G SOT - 23 Marking : SK S.
  • Green Compound.
  • ESD HBM = 2000 V as per JEDEC A114A; ESD CDM = 2000 V as per JEDEC C101C Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device m.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor May 2013 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage D • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant G SOT - 23 Marking : SK S • Green Compound • ESD HBM = 2000 V as per JEDEC A114A; ESD CDM = 2000 V as per JEDEC C101C Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.