The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Analog Power
N-Channel 60-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Power Routing • DC/DC Conversion Circuits • Motor Drives
BSS138N
VDS (V) 50
PRODUCT SUMMARY rDS(on) (Ω)
3.5 @ VGS = 10V 6 @ VGS = 4.5V 10 @ VGS = 2.75V
ID (A) 0.5 0.4 0.3
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 50
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
0.5 0.4 2 0.5
Power Dissipation a
TA=25°C TA=70°C
PD
1.3 0.
BSS138N Datasheet
