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BSS138N - SIPMOS Small Signal Transistor

Key Features

  • N-channel.
  • Enhancement mode.
  • Logic level.
  • dv /dt rated.
  • Pb-free lead-plating; RoHS compliant.
  • Qualified according to AEC Q101.
  • Halogen free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID BSS138N 60 V 3.5 Ω 0.23 A PG-SOT-23 Type BSS138N BSS138N Package Tape and Reel PG-SOT-23 H6327: 3000 PG-SOT-23 H6433: 10000 Marking SKs SKs Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pul.

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Datasheet Details

Part number BSS138N
Manufacturer Infineon Technologies AG
File Size 456.35 KB
Description SIPMOS Small Signal Transistor
Datasheet download datasheet BSS138N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SIPMOS® Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID BSS138N 60 V 3.5 Ω 0.23 A PG-SOT-23 Type BSS138N BSS138N Package Tape and Reel PG-SOT-23 H6327: 3000 PG-SOT-23 H6433: 10000 Marking SKs SKs Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Reverse diode dv /dt dv /dt I D=0.23 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS ESD sensitivity JESD22-A114 (HBM) Power dissipation Operating and storage temperature P tot T A=25 °C T j, T stg IEC climatic category; DIN IEC 68-1 Value 0.