BSS138W - N-Channel FET

onsemi

General Description

These N

Channel Enhancement Mode Field Effect Transistor.

state resistance while provide rugged, reliable, and fast switching performance.

Key Features

RDS(on) = 3.5 W @ VGS = 10 V, ID = 0.22 A RDS(on) = 6.0 W @ VGS = 4.5 V, ID = 0.22 A.
High Density Cell Design For Extremely Low RDS(on).
Rugged and Reliable.
Compact Industry Standard SOT.
323 Surface Mount Package.
These Devices are Pb.
Free and Halide Free.

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BSS138W n-channel fet by onsemi - Datasheet Preview

Datasheet Details

Part number	BSS138W
Manufacturer	onsemi
File Size	250.41 KB
Description	N-Channel FET
Datasheet	BSS138W Datasheet

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Other Datasheets by onsemi

Part Number	Description
BSS138	N-Channel MOSFET
BSS138K	N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138W Description These N−Channel Enhancement Mode Field Effect Transistor. These products have been Designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • RDS(on) = 3.5 W @ VGS = 10 V, ID = 0.22 A RDS(on) = 6.0 W @ VGS = 4.5 V, ID = 0.