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DGD2106M - HIGH-SIDE AND LOW-SIDE GATE DRIVER

General Description

The DGD2106M is a High-voltage / High-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a High-Side/Low-Side configuration.

High voltage processing techniques enable the DGD2106M’s high-side to switch to 600V in a bootstrap operation.

Key Features

  • Floating High-Side Driver in Bootstrap Operation to 600V.
  • Drives Two N-Channel MOSFETs or IGBTs in High-Side/Low-Side Configuation.
  • Outputs Tolerant to Negative Transients.
  • Wide Logic and Low-Side Gate Driver Supply Voltage: 10V to 20V.
  • Logic Input (HIN and LIN) 3.3V Capability.
  • Schmitt Triggered Logic Inputs with Internal Pull Down.
  • Undervoltage Lockout for VCC.
  • Extended Temperature Range: -40°C to +125°C.
  • Totally Lead-Free & Fully RoHS Compliant (N.

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Description The DGD2106M is a High-voltage / High-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a High-Side/Low-Side configuration. High voltage processing techniques enable the DGD2106M’s high-side to switch to 600V in a bootstrap operation. The DGD2106M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The DGD2106M is available in a space saving SO-8 package and operates over an extended -40°C to +125°C temperature range.