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DGD2101M - HIGH-SIDE AND LOW-SIDE GATE DRIVER

General Description

The DGD2101M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration.

High-voltage processing techniques enable the DGD2101M’s high side to switch to 600V in a bootstrap operation.

Key Features

  • Floating High-side Driver in Bootstrap Operation to 600V.
  • Drives Two N-Channel MOSFETs or IGBTs in High-side / Low- side Configuation.
  • Outputs Tolerant to Negative Transients.
  • Wide Low-side Gate Driver and Logic Supply: 10V to 20V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DGD2101M HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The DGD2101M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage processing techniques enable the DGD2101M’s high side to switch to 600V in a bootstrap operation. The 50ns (max) propagation delay matching between the high and the low side drivers allows high frequency switching. The DGD2101M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high-pulse current buffers designed for minimum driver cross conduction. The low-side gate driver and logic share a common ground.