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DGD2106M Datasheet High-side And Low-side Gate Driver

Manufacturer: Diodes Incorporated

Overview: Description The DGD2106M is a High-voltage / High-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a High-Side/Low-Side configuration.

General Description

The DGD2106M is a High-voltage / High-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a High-Side/Low-Side configuration.

High voltage processing techniques enable the DGD2106M’s high-side to switch to 600V in a bootstrap operation.

The DGD2106M logic inputs are patible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices.

Key Features

  • Floating High-Side Driver in Bootstrap Operation to 600V.
  • Drives Two N-Channel MOSFETs or IGBTs in High-Side/Low-Side Configuation.
  • Outputs Tolerant to Negative Transients.
  • Wide Logic and Low-Side Gate Driver Supply Voltage: 10V to 20V.
  • Logic Input (HIN and LIN) 3.3V Capability.
  • Schmitt Triggered Logic Inputs with Internal Pull Down.
  • Undervoltage Lockout for VCC.
  • Extended Temperature Range: -40°C to +125°C.
  • Totally Lead-Free & Fully RoHS Compliant (N.

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DGD2106M Distributor