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DGD2103M Datasheet Half-bridge Gate Driver

Manufacturer: Diodes Incorporated

Overview: Description The DGD2103M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration.

General Description

The DGD2103M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration.

High voltage processing techniques enable the DGD2103M’s high side to switch to 600V in a bootstrap operation.

The DGD2103M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices.

Key Features

  • high pulse current buffers designed for minimum driver cross conduction. DGD2103M has a fixed internal deadtime of 420ns (typical). The DGD2103M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range. DGD2103M HALF-BRIDGE GATE DRIVER IN SO-8 Features.
  • Floating High-Side Driver in Bootstrap Operation to 600V.
  • Drives Two N-channel MOSFETs or IGBTs in a Half-Bridge Configuration.
  • Designed for enhanced performance in noisy motor appli.

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DGD2103M Distributor