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DGD2103M - HALF-BRIDGE GATE DRIVER

General Description

The DGD2103M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration.

High voltage processing techniques enable the DGD2103M’s high side to switch to 600V in a bootstrap operation.

Key Features

  • high pulse current buffers designed for minimum driver cross conduction. DGD2103M has a fixed internal deadtime of 420ns (typical). The DGD2103M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range. DGD2103M HALF-BRIDGE GATE DRIVER IN SO-8 Features.
  • Floating High-Side Driver in Bootstrap Operation to 600V.
  • Drives Two N-channel MOSFETs or IGBTs in a Half-Bridge Configuration.
  • Designed for enhanced performance in noisy motor appli.

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Description The DGD2103M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2103M’s high side to switch to 600V in a bootstrap operation. The DGD2103M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver output features high pulse current buffers designed for minimum driver cross conduction. DGD2103M has a fixed internal deadtime of 420ns (typical). The DGD2103M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.