Datasheet Summary
Description
The DGD2103M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2103M’s high side to switch to 600V in a bootstrap operation.
The DGD2103M logic inputs are patible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver output Features high pulse current buffers designed for minimum driver cross conduction. DGD2103M has a fixed internal deadtime of 420ns (typical).
The DGD2103M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.
HALF-BRIDGE GATE...