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DGD2103A - HALF-BRIDGE GATE DRIVER

General Description

The DGD2103A is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration.

High voltage processing techniques enable the DGD2103A’s high side to switch to 600V in a bootstrap operation.

Key Features

  • Floating High-Side Driver in Bootstrap Operation to 600V.
  • Drives Two N-channel MOSFETs or IGBTs in a Half Bridge Configuration.
  • 210mA Source / 360mA Sink Output Current Capability.
  • Outputs Tolerant to Negative Transients.
  • Internal Dead Time of 520ns to Protect MOSFETs.
  • Wide Low Side Gate Driver Supply Voltage: 10V to 20V.
  • Logic Input (HIN and LIN.
  • ) 3.3V Capability.
  • Schmitt Triggered Logic Inputs.
  • Undervoltage Lockout for VCC (Logic and Low Side S.

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Description The DGD2103A is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD2103A’s high side to switch to 600V in a bootstrap operation. The DGD2103A logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The DGD2103A has a fixed internal deadtime of 520ns (typical). The DGD2103A is offered in SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.