Datasheet4U Logo Datasheet4U.com

DGD21904 - HIGH-SIDE AND LOW-SIDE GATE DRIVER

General Description

The DGD21904 is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration.

High voltage processing techniques enable the DGD21904’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions.

Key Features

  • Floating high-side driver in bootstrap operation to 600V.
  • Drives two N-Channel MOSFETs or IGBTs in a half bridge configuation.
  • Output drivers capable of 4.5A/4.5A typ sink/source.
  • Logic input (HIN and LIN) 3.3V capability.
  • Schmitt triggered logic inputs with internal pull down.
  • Undervoltage lockout for high and low-side drivers.
  • Space saving SO-8 package available.
  • Extended temperature range: -40°C to +125°C.
  • Totally Lead-Free & Fully RoHS Compliant.

📥 Download Datasheet

Full PDF Text Transcription for DGD21904 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DGD21904. For precise diagrams, and layout, please refer to the original PDF.

Description The DGD21904 is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing...

View more extracted text
FETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD21904’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions. The DGD21904 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The DGD21904 is available in SO-14 (Type TH) package. The operating temperature extends from -40°C to +125°C.