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DGD21904M - HIGH-SIDE AND LOW-SIDE GATE DRIVER

Datasheet Summary

Description

The DGD21904M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration.

High-voltage processing techniques enable the DGD21904M’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions.

Features

  • Floating High-Side Driver in Bootstrap Operation to 600V.
  • Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuation.
  • Output Drivers Capable of 4.5A/4.5A Typ. Sink/Source.
  • Logic Input (HIN and LIN) 3.3V Capability.
  • Schmitt Triggered Logic Inputs with Internal Pull Down.
  • Undervoltage Lockout for High and Low-Side Drivers.
  • Extended Temperature Range: -40°C to +125°C.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony.

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Datasheet Details

Part number DGD21904M
Manufacturer DIODES
File Size 738.60 KB
Description HIGH-SIDE AND LOW-SIDE GATE DRIVER
Datasheet download datasheet DGD21904M Datasheet
Additional preview pages of the DGD21904M datasheet.

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Full PDF Text Transcription

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Description The DGD21904M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the DGD21904M’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions. The DGD21904M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The DGD21904M is available in SO-14 package. The operating temperature extends from -40°C to +125°C.
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