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DGD21904M - HIGH-SIDE AND LOW-SIDE GATE DRIVER

General Description

The DGD21904M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration.

High-voltage processing techniques enable the DGD21904M’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions.

Key Features

  • Floating High-Side Driver in Bootstrap Operation to 600V.
  • Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuation.
  • Output Drivers Capable of 4.5A/4.5A Typ. Sink/Source.
  • Logic Input (HIN and LIN) 3.3V Capability.
  • Schmitt Triggered Logic Inputs with Internal Pull Down.
  • Undervoltage Lockout for High and Low-Side Drivers.
  • Extended Temperature Range: -40°C to +125°C.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony.

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Full PDF Text Transcription for DGD21904M (Reference)

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Description The DGD21904M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processin...

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SFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the DGD21904M’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions. The DGD21904M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The DGD21904M is available in SO-14 package. The operating temperature extends from -40°C to +125°C.