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DGD2190M - HIGH-SIDE AND LOW-SIDE GATE DRIVER

Datasheet Summary

Description

The DGD2190M is a high-voltage/high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration.

High-voltage processing techniques enable the DGD2190M’s highside to switch to 600V in a bootstrap operation under high dV/dt conditions.

Features

  • Floating High-Side Driver in Bootstrap Operation to 600V.
  • Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuation.
  • Output Drivers Capable of 4.5A/4.5A Typ. Sink/Source.
  • Logic Input (HIN and LIN) 3.3V Capability.
  • Schmitt Triggered Logic Inputs with Internal Pull-Down.
  • Undervoltage Lockout for High and Low-Side Drivers.
  • Extended Temperature Range: -40°C to +125°C.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony.

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Datasheet Details

Part number DGD2190M
Manufacturer DIODES
File Size 736.72 KB
Description HIGH-SIDE AND LOW-SIDE GATE DRIVER
Datasheet download datasheet DGD2190M Datasheet
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Full PDF Text Transcription

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DGD2190M HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The DGD2190M is a high-voltage/high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD2190M’s highside to switch to 600V in a bootstrap operation under high dV/dt conditions. The DGD2190M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The DGD2190M is offered in the SO-8 package and operates over an extended -40°C to +125°C temperature range.
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