Download DGD2190M Datasheet PDF
DGD2190M page 2
Page 2
DGD2190M page 3
Page 3

DGD2190M Description

The DGD2190M is a high-voltage/high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD2190M’s highside to switch to 600V in a bootstrap operation under high dV/dt conditions. The DGD2190M logic inputs are patible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices.

DGD2190M Key Features

  • Floating High-Side Driver in Bootstrap Operation to 600V
  • Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge
  • Output Drivers Capable of 4.5A/4.5A Typ. Sink/Source
  • Logic Input (HIN and LIN) 3.3V Capability
  • Schmitt Triggered Logic Inputs with Internal Pull-Down
  • Undervoltage Lockout for High and Low-Side Drivers
  • Extended Temperature Range: -40°C to +125°C
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive