Datasheet Details
| Part number | DGD2190M |
|---|---|
| Manufacturer | Diodes Incorporated |
| File Size | 736.72 KB |
| Description | HIGH-SIDE AND LOW-SIDE GATE DRIVER |
| Datasheet |
 DGD2190M Datasheet
|
|
|
General Description
The DGD2190M is a high-voltage/high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration.
High-voltage processing techniques enable the DGD2190M’s highside to switch to 600V in a bootstrap operation under high dV/dt conditions.
Key Features
- Floating High-Side Driver in Bootstrap Operation to 600V.
- Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuation.
- Output Drivers Capable of 4.5A/4.5A Typ. Sink/Source.
- Logic Input (HIN and LIN) 3.3V Capability.
- Schmitt Triggered Logic Inputs with Internal Pull-Down.
- Undervoltage Lockout for High and Low-Side Drivers.
- Extended Temperature Range: -40°C to +125°C.
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
- Halogen and Antimony.