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DMC1029UFDB Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC1029UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Device V(BR)DSS
Q1
N-Channel
12V
Q2
P-Channel
-12V
RDS(ON) max
29mΩ @ VGS = 4.5V
34mΩ @ VGS = 2.5V
44mΩ @ VGS = 1.8V
65mΩ @ VGS = 1.5V
61m@ VGS = -4.5V
81mΩ @ VGS = -2.5V
115mΩ @ VGS = -1.8V
210mΩ @ VGS = -1.5V
ID MAX
TA = +25°C
5.6A
5.1A
4.5A
3.7A
-3.8A
-3.3A
-2.8A
-2.3A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable per
MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
S2
G2
D2
D1
D1
D2
G1
S1
Pin1
Bottom View
D1 D2
G1 G2
S1 S2
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMC1029UFDB -7
DMC1029UFDB -13
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
2D = Product Type Marking Code
YM = Date Code Marking
2D Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
1 of 9
www.diodes.com
February 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMC1029UFDB Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH)
Avalanche Energy (L = 0.1mH)
TA = +25C
TA = +70C
TA = +25C
TA = +70C
DMC1029UFDB
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Q1
N-CHANNEL
12
±8
5.6
4.4
7.2
5.8
1
20
15
12
Q2
P-CHANNEL
-12
±8
-3.8
-3.0
-5.0
-4.0
-1
-15
-12
8
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Steady State
t < 5s
Steady State
t < 5s
Operating and Storage Temperature Range
Note: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.4
2.2
91
55
20
-55 to +150
Units
W
°C/W
°C
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
2 of 9
www.diodes.com
February 2015
© Diodes Incorporated


Part Number DMC1029UFDB
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 9 Pages
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