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DMC2041UFDB Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC2041UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
Q1
N-Channel
Q2
P-Channel
20V
-20V
RDS(ON) max
40mΩ @ VGS = 4.5V
65mΩ @ VGS = 2.5V
90m@ VGS = -4.5V
137mΩ @ VGS = -2.5V
ID MAX
TA = +25°C
4.7A
3.7A
-3.2A
-2.6A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
ESD PROTECTED
S2
G2
D2
D1
D2
G1
S1
Pin1
Bottom View
D1
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe; Solderable per
MIL-STD-202, Method 208 e4
Terminal Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
D1 D2
G1 G2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Q1 N-CHANNEL MOSFET
Q2 P-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMC2041UFDB -7
DMC2041UFDB -13
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
U-DFN2020-6
D4
D4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
DMC2041UFDB
Document number: DS37420 Rev. 2 - 2
1 of 9
www.diodes.com
February 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMC2041UFDB Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

No Preview Available !

DMC2041UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Q1
N-CHANNEL
20
±12
4.7
3.8
6.1
4.9
2
30
Q2
P-CHANNEL
-20
±12
-3.2
-2.5
-4.1
-3.2
-1.5
-18
Units
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s
Steady State
t < 5s
Symbol
PD
RJA
RJC
TJ, TSTG
Value
1.4
2.2
92
55
30
-55 to 150
Units
W
°C/W
°C
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
20
VGS(th)
RDS (ON)
VSD
0.35
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Typ
23
26
0.7
713
80
68
15
8
15
1.0
1.1
3.6
15.9
16.0
2.6
6.6
1.2
Notes:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Max
1.0
±10
1.4
40
65
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 20V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.3A
V VGS = 0V, IS = 4.4A
pF
pF VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 10V, ID = 5.5A
nC
ns
ns VDD = 10V, VGS = 4.5V,
ns RL = 2.3Ω, RG = 1Ω
ns
nS IS = 4.4A, dI/dt = 100A/μs
nC IS = 4.4A, dI/dt = 100A/μs
DMC2041UFDB
Document number: DS37420 Rev. 2 - 2
2 of 9
www.diodes.com
February 2015
© Diodes Incorporated


Part Number DMC2041UFDB
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 9 Pages
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