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DMG3N60SJ3 - N-CHANNEL MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Motor Control Backlighting DC-DC Converters Power Management F

Key Features

  • Low On-Resistance.
  • High BVDSS Rating for Power.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 3.5Ω @ VGS = 10V ID @TC = +25°C 2.8A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Backlighting  DC-DC Converters  Power Management Functions Features and Benefits  Low On-Resistance  High BVDSS Rating for Power Application  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.