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Diodes Semiconductor Electronic Components Datasheet

DMG3N60SJ3 Datasheet

N-CHANNEL MOSFET

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DMG3N60SJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
(@ TJ Max)
650V
RDS(ON) Max
3.5@ VGS = 10V
ID
@TC = +25°C
2.8A
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features and Benefits
Low On-Resistance
High BVDSS Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: TO251
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO251 (Type TH)
Top View
Bottom View
GDS
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMG3N60SJ3
Case
TO251 (Type TH)
Packaging
75 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
3N60SJ
YYWW
DMG3N60SJ3
Document number: DS39314 Rev. 3 - 2
= Manufacturers Marking
3N60SJ = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 20 = 2020)
WW = Week Code (01 to 53)
1 of 7
www.diodes.com
June 2020
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMG3N60SJ3 Datasheet

N-CHANNEL MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
Peak Diode Recovery dv/dt
Steady
State
Steady
State
TC = +25°C
TC = +100°C
TA = +25°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
dv/dt
DMG3N60SJ3
Value
600
±30
2.8
1.8
0.7
2.5
4.2
1.0
33
5
Unit
V
V
A
A
A
A
A
mJ
V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
TA = +25°C
Symbol
PD
PD
RθJA
RθJC
TJ, TSTG
Value
41
16
2.5
49
3.0
-55 to +150
Unit
W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
600
2.0




Typ
3.0
2.9
0.87
354
41
4
2.6
12.6
1.7
7.1
10.6
22
34
28
198
952
Max
1
100
4.0
3.5
1.5




Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 600V, VGS = 0V
nA VGS = ±30V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.5A
V VGS = 0V, IS = 3.0A
pF VDS = 25V, f = 1.0MHz, VGS = 0V
VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDD = 480V, ID = 2.5A,
VGS = 10V
ns VDD = 300V, RG = 25, ID = 2.5A,
VGS = 10V
ns dI/dt = 100A/μs, VDS = 100V,
nC IF = 2.5A
DMG3N60SJ3
Document number: DS39314 Rev. 3 - 2
2 of 7
www.diodes.com
June 2020
© Diodes Incorporated


Part Number DMG3N60SJ3
Description N-CHANNEL MOSFET
Maker Diodes
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