DMG3N60SJ3 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 3.5Ω @ VGS = 10V ID @TC = +25°C 2.8A Description a

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