DMG4812SSS Datasheet | Diodes Incorporated

Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features - DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: - Low RDS(ON) - minimizes conduction losses - Low VSD - reducing the losses due to body diode conduction - Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses - Low gate capacitance (Qg/Qgs) ratio - reduces risk of shoot-through or cross conduction currents at high frequencies - Avalanche rugged - IAR and EAR rated - ESD Protected - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability Applications - DC-DC Converters - Power management functions ESD PROTECTED Top View Mechanical Data - Case: SO-8 - Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram Below - Weight: 0.072 grams (approximate) S DG Top View Internal Schematic Equivalent circuit Ordering Information (Note 4) Notes: Part Number...