DMG4812SSS
Overview
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
- Low RDS(ON) - minimizes conduction losses
- Low VSD - reducing the losses due to body diode conduction
- Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio - reduces risk of shoot-through or cross conduction currents at high frequencies
- Avalanche rugged - IAR and EAR rated
- ESD Protected
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
