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DMG4932LSD - ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

  • High Density UMOS with Schottky Barrier Diode.
  • Low Leakage Current at High Temp.
  • High Conversion Efficiency.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to Increase Conversion Efficiency.
  • 100% UIS and Rg Tested.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Re.

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Full PDF Text Transcription

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NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMG4932LSD ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  High Density UMOS with Schottky Barrier Diode  Low Leakage Current at High Temp.  High Conversion Efficiency  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to Increase Conversion Efficiency  100% UIS and Rg Tested  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound.
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