DMG4932LSD
DMG4932LSD is ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
NOT REMENDED FOR NEW DESIGN NO ALTERNATE PART
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
- High Density UMOS with Schottky Barrier Diode
- Low Leakage Current at High Temp.
- High Conversion Efficiency
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to
Increase Conversion Efficiency
- 100% UIS and Rg Tested
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
- Case: SO-8
- Case Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram Below
- Weight: 0.072 grams (Approximate)
Schottky Integrated MOSFET Top View
D2
G2
D2
S2/D1
G1
S2/D1
S1...
