DMG4932LSD Datasheet - Diodes

ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

* High Density UMOS with Schottky Barrier Diode

* Low Leakage Current at High Temp.

* High Conversion Efficiency

* Low On-Resistance

* Low Input Capacitance

* Fast Switching Speed

* Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to Increase Conversion Efficie

DMG4932LSD

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Asymetrical dual n-channel enhancement mode mosfet.

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