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DMG9N65CT Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMG9N65CT pdf
DMG9N65CT
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
650V
RDS(ON)
1.3@ VGS = 10V
Package
TO-220AB
ID
TC = +25°C
9.0 A
Description
This new generation complementary dual MOSFET features low on-
resistance and fast switching, making it ideal for high-efficiency power
management applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDss rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO-220AB
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: TO-220AB – 1.85 grams (Approximate)
TO-220AB
D
G
Top View
Bottom View
S
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMG9N65CT
Case
TO-220AB
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TO-220AB
9N65CT
YYWW AB
9N65CT = Product Type Marking Code
AB = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 11 = 2011)
WW = Week (01 - 53)
DMG9N65CT
Document number: DS35619 Rev. 7 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMG9N65CT Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMG9N65CT pdf
DMG9N65CT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TC = +25°C
TC = +70°C
Pulsed Drain Current (Note 6) 10us pulse, pulse duty cycle<=1%
Avalanche Current (Note 7) VDD = 100V, VGS = 10V, L = 60mH
Repetitive Avalanche Energy (Note 7) VDD = 100V, VGS = 10V, L = 60mH
Symbol
VDSS
VGSS
ID
IDM
IAR
EAR
Value
650
±30
9.0
7.0
30
2.7
260
Unit
V
V
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5) TC = +25°C
TC = +70°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJC
TJ, TSTG
Max
165
100
0.7
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ
BVDSS
IDSS
IGSS
650
VGS(th)
RDS (ON)
|Yfs|
VSD
3
0.7
8.5
0.7
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
— 2,310
— 122
— 2.2
— 2.2
— 39
— 8.5
— 11.9
— 39
— 29
— 122
— 28
— 570
— 4.17
Notes:
5. Device mounted on an infinite heatsink.
6. Repetitive rating, pulse width limited by junction temperature.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
Max
1.0
±100
5
1.3
1.0
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 650V, VGS = 0V
nA VGS = ±30V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.5A
S VDS = 40V, ID = 4.5A
V VGS = 0V, IS = 1A
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VGS = 10V, VDS = 520V,
ID = 8A
ns
ns VGS = 10V, VDS = 325V,
ns RG = 25, ID = 8A
ns
ns dI/dt = 100A/µs, VDS = 100V,
µC IF = 8A
DMG9N65CT
Document number: DS35619 Rev. 7 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated


Part Number DMG9N65CT
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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