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DMN10H099SK3 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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  Green
DMN10H099SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
100V
RDS(on) max
80m@ VGS = 10V
99m@ VGS = 6V
ID
TC = +25°C
17A
15A
Description
This new generation complementary MOSFET features low
on-resistance and fast switching, making it ideal for high efficiency
power management applications.
Applications
Power Management Functions
DC-DC Converters
Features
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
TO252
D
Top View
D
GS
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN10H099SK3-13
Case
TO252
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N099SK
YYWW
=Manufacturer’s Marking
N099SK = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
DMN10H099SK3
Document number: DS37263 Rev. 2 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMN10H099SK3 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMN10H099SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current, L = 1mH
Avalanche Energy, L = 1mH
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
Value
100
±20
17
13
20
7.5
28.5
Units
V
V
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +70°C
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
34
22
51
3.6
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
100
1.5
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr




Typ
2
67
69
0.77
1172
40.8
31.3
1.6
25.2
12.2
5.3
5.9
5.4
5.9
20
7.3
19.7
15.9
Max
1
±100
3
80
99




Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Guaranteed by design. Not subject to product testing.
7. Short duration pulse test used to minimize self-heating effect.
Unit Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 80V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 3.3A
VGS = 6V, ID = 3A
V VGS = 0V, IS = 3.2A
pF VDS = 50V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDS = 50V, ID = 3.3A
ns VDD = 50V, RG = 6.0, ID = 3.3A
ns
nC IF = 3.3A, dI/dt = 100A/μs
DMN10H099SK3
Document number: DS37263 Rev. 2 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated


Part Number DMN10H099SK3
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
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