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DMN10H220LVT Datasheet N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  DC-DC Converters  Power Management Functions  Backlighting

Overview

ADVANCE INFORMATION DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.24A 2.

Key Features

  • Low Input Capacitance.
  • Low On-Resistance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: TSOT26.
  • Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminal Connections: See Diagram.
  • Terminals: Finish.
  • Tin Finish Annealed over Copper Leadf.