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DMN2400UFD - N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power Management Functions Battery Operated Systems and Solid-State Re

Key Features

  • ID MAX TA = +25°C 0.9A 0.7A 0.5A 0.3A.
  • Low On-Resistance.
  • Very low Gate Threshold Voltage, 1.0V Max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription for DMN2400UFD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2400UFD. For precise diagrams, and layout, please refer to the original PDF.

NEW PRODUCT Product Summary BVDSS 20V RDS(ON) MAX 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1.0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V NOT RECOMMENDED FOR NEW DESIGN USE DMN2450UFD DM...

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.8V 1.6Ω @ VGS = 1.5V NOT RECOMMENDED FOR NEW DESIGN USE DMN2450UFD DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ID MAX TA = +25°C 0.9A 0.7A 0.5A 0.3A  Low On-Resistance  Very low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

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