DMN2400UFDQ Datasheet | Diodes Incorporated

N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 20V RDS(ON) 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1.0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V ID TA = +25°C 0.9A 0.7A 0.5A 0.3A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. - Power Management Functions - Battery Operated Systems and Solid-State Relays - Load Switch Features and Benefits - Low On-Resistance - Very low Gate Threshold Voltage, 1.0V Max. - Low Input Capacitance - Fast Switching Speed - ESD Protected Gate - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 standards for High Reliability - PPAP Capable (Note 4) Mechanical Data - Case: U-DFN1212-3 - Case Material: Molded Plastic; UL...