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DMN2501UFB4 - N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power Management Functions Mechanical Data Cas

Key Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage VGS(TH), 1.0V Max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Ultra-Small Surfaced Mount Package.
  • Ultra-Low Package Profile, 0.4mm Maximum Package Height.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription for DMN2501UFB4 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2501UFB4. For precise diagrams, and layout, please refer to the original PDF.

ADVANCE INFORMATION DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 0.4Ω @ VGS = 4.5V 0.5 Ω @ VGS = 2.5V 0.7 Ω @ VGS = 1.8V ID TA =...

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n) max 0.4Ω @ VGS = 4.5V 0.5 Ω @ VGS = 2.5V 0.7 Ω @ VGS = 1.8V ID TA = +25°C 1.5A 1.3A 1.1A Features and Benefits  Low On-Resistance  Very Low Gate Threshold Voltage VGS(TH), 1.0V Max.  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surfaced Mount Package  Ultra-Low Package Profile, 0.4mm Maximum Package Height  ESD Protected Gate  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free.

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