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DMN2500UFB4 - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power management functions Mechanical D

Features

  • Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.4mm maximum package height ESD Protected Gate Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability.

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Datasheet preview – DMN2500UFB4

Datasheet Details

Part number DMN2500UFB4
Manufacturer Diodes Incorporated
File Size 115.92 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMN2500UFB4 Datasheet
Additional preview pages of the DMN2500UFB4 datasheet.

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Full PDF Text Transcription

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DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max 0.4Ω @ VGS = 4.5V ID TA = 25°C 1A 0.8A Features and Benefits • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.4mm maximum package height ESD Protected Gate Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability ADVANCE INFORMATION 20V 0.7Ω @ VGS = 1.
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