DMN2500UFB4 Datasheet | Diodes Incorporated

N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max 0.4Ω @ VGS = 4.5V ID TA = 25°C 1A 0.8A Features and Benefits - - - - - - - - - - Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.4mm maximum package height ESD Protected Gate Lead, Halogen, and Antimony Free, RoHS pliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability ADVANCE INFORMATION 20V 0.7Ω @ VGS = 1.8V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet...