DMN2500UFB4 Datasheet N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max 0.4Ω @ VGS = 4.5V ID TA = 25°C 1A 0.

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Datasheet Details

Part number	DMN2500UFB4
Manufacturer	Diodes Incorporated
File Size	115.92 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Download	DMN2500UFB4 Download (PDF)

General Description

and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• • DC-DC Converters Power management functions Mechanical Data • • • • • • Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe.

Key Features

Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.4mm maximum package height ESD Protected Gate Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability.

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