DMN2501UFB4
DMN2501UFB4 is N-Channel MOSFET manufactured by Diodes Incorporated.
ADVANCE INFORMATION
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(on) max
0.4Ω @ VGS = 4.5V 0.5 Ω @ VGS = 2.5V 0.7 Ω @ VGS = 1.8V
ID TA = +25°C
1.5A 1.3A 1.1A
Features and Benefits
- Low On-Resistance
- Very Low Gate Threshold Voltage VGS(TH), 1.0V Max.
- Low Input Capacitance
- Fast Switching Speed
- Ultra-Small Surfaced Mount Package
- Ultra-Low Package Profile, 0.4mm Maximum Package Height
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to...
