DMN2501UFB4 Datasheet N-Channel MOSFET

Manufacturer: Diodes Incorporated

Overview: ADVANCE INFORMATION DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 0.4Ω @ VGS = 4.5V 0.5 Ω @ VGS = 2.5V 0.7 Ω @ VGS = 1.8V ID TA = +25°C 1.5A 1.3A 1.

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Datasheet Details

Part number	DMN2501UFB4
Manufacturer	Diodes Incorporated
File Size	549.94 KB
Description	N-Channel MOSFET
Download	DMN2501UFB4 Download (PDF)

General Description

and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 DC-DC Converters  Power Management Functions Mechanical Data  Case: X2-DFN1006-3  Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – NiPdAu over Copper Leadframe;

Key Features

Low On-Resistance.
Very Low Gate Threshold Voltage VGS(TH), 1.0V Max.
Low Input Capacitance.
Fast Switching Speed.
Ultra-Small Surfaced Mount Package.
Ultra-Low Package Profile, 0.4mm Maximum Package Height.
ESD Protected Gate.
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Reliability.

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